sot-23 plastic-encapsulate diodes bas40/-04/-05/-06 schottky barrier diode features z low forward voltage z fast switching bas40 marking: 43? bas40-06 marking: 46 bas40-05 marking 45 bas40-04 marking 44 maximum ratings @t a =25 parameter symbol limit unit peak repetitive peak reverse voltage working peak reverse voltage dc b locking v oltage v rrm v rwm v r 40 v forward continuous c urrent i fm 200 ma power d issipation p d 200 mw thermal r esistance j unction to a mbient r ja 500 /w junction temperature t j 1 2 5 storage temperature range t stg - 5 5 ~+ 1 50 electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions m in m ax u nit reverse breakdown voltage v (br) i r = 10 a 40 v reverse voltage leakage current i r v r =30v 200 na forward voltage v f i f =1ma i f =40ma 380 1000 mv diode capacitance c d v r =0,f=1mhz 5 pf reverse r ecovery time t r r i rr =1ma, i r =i f =10ma r l =100 ? 5 n s sot-23 dongguan nanjing electronics ltd., 1/2 c,jul,2012
0 5 10 15 20 25 30 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 0.00 0.05 0.10 0.15 0.20 0.25 01 02 03 04 0 1e-3 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 reverse voltage v r (v) capacitance between terminals c t (pf) ta=25 f=1mhz capacitance characteristics bas40/-04/-05/-06 typical characteristics ambient temperature t j ( ) power dissipation p d (w) power derating curve ta=25 ta=100 reverse current i r (ua) reverse voltage v r (v) reverse characteristics ta=25 ta=100 forward characteristics forward current i f (ma) forward voltage v f (v) 2/2 c,jul,2012
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